parameter typ. max. units r ja maximum junction-to-ambient 75 100
hexfet power mosfet thermal resistance v dss = -12v r ds(on) = 0.05 ? parameter max. units v ds drain- source voltage -12 v i d @ t a = 25c continuous drain current, v gs @ -4.5v -4.3 i d @ t a = 70c continuous drain current, v gs @ -4.5v -3.4 a i dm pulsed drain current -34 p d @t a = 25c power dissipation 1.3 p d @t a = 70c power dissipation 0.8 linear derating factor 0.01 w/c e as single pulse avalanche energy 33 mj v gs gate-to-source voltage 8.0 v t j, t stg junction and storage temperature range -55 to + 150 c
these p-channel mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet ? power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. a thermally enhanced large pad leadframe has been incorporated into the standard sot-23 package to produce a hexfet power mosfet with the industry's smallest footprint. this package, dubbed the micro3 ? , is ideal for applications where printed circuit board space is at a premium. the low profile (<1.1mm) of the micro3 allows it to fit easily into extremely thin application environments such as portable electronics and pcmcia cards. the thermal resistance and power dissipation are the best available.
micro3 ? ultra low on-resistance p-channel mosfet sot-23 footprint low profile (<1.1mm) available in tape and reel fast switching 1.8v gate rated lead-free halogen-free product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -1.3a, v gs = 0v t rr reverse recovery time ??? 22 33 ns t j = 25c, i f = -1.3a q rr reverse recoverycharge ??? 8.0 12 nc di/dt = -100a/s repetitive rating; pulse width limited by max. junction temperature. pulse width 300s; duty cycle 2%. source-drain ratings and characteristics -1.3 -34 s d g
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starting t j = 25c, l = 3.5mh r g = 25 ? , i as = -4.3a. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -12 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? -0.007 ??? v/c reference to 25c, i d = -1ma ??? ??? 0.050 v gs = -4.5v, i d = -4.3a r ds(on) static drain-to-source on-resistance ### ??? 0.085 v gs = -2.5v, i d = -2.5a ### ??? 0.125 v gs = -1.8v, i d = -2.0a v gs(th) gate threshold voltage -0.40 -0.55 -0.95 v v ds = v gs , i d = -250a g fs forward transconductance 8.6 ??? ??? s v ds = -10v, i d = -4.3a ??? ??? -1.0 v ds = -12v, v gs = 0v ??? ??? -25 v ds = -9.6v, v gs = 0v, t j = 55c gate-to-source forward leakage ??? ??? -100 v gs = -8.0v gate-to-source reverse leakage ??? ??? 100 v gs = 8.0v q g total gate charge ??? 10 15 i d = -4.3a q gs gate-to-source charge ??? 1.4 2.1 nc v ds = -10v q gd gate-to-drain ("miller") charge ??? 2.6 3.9 v gs = -5.0v t d(on) turn-on delay time ??? 11 ??? v dd = -6.0v t r rise time ??? 32 ??? i d = -1.0a t d(off) turn-off delay time ??? 250 ??? r d = 6.0 ? t f fall time ??? 210 ??? r g = 89 ? c iss input capacitance ??? 830 ??? v gs = 0v c oss output capacitance ??? 180 ??? pf v ds = -10v c rss reverse transfer capacitance ??? 125 ??? ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) $ a ? i dss drain-to-source leakage current na ns
product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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